Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
charge carrier deficiency — krūvininkų nuskurdinimas statusas T sritis radioelektronika atitikmenys: angl. charge carrier deficiency; charge carrier depletion vok. Ladungsträgerverarmung, f; Verarmung an Ladungsträgern, f rus. обеднение носителями заряда, n pranc. déplétion … Radioelektronikos terminų žodynas
déplétion des porteurs de charge — krūvininkų nuskurdinimas statusas T sritis radioelektronika atitikmenys: angl. charge carrier deficiency; charge carrier depletion vok. Ladungsträgerverarmung, f; Verarmung an Ladungsträgern, f rus. обеднение носителями заряда, n pranc. déplétion … Radioelektronikos terminų žodynas
Depletion region — In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers… … Wikipedia
Ladungsträgerverarmung — krūvininkų nuskurdinimas statusas T sritis radioelektronika atitikmenys: angl. charge carrier deficiency; charge carrier depletion vok. Ladungsträgerverarmung, f; Verarmung an Ladungsträgern, f rus. обеднение носителями заряда, n pranc. déplétion … Radioelektronikos terminų žodynas
Verarmung an Ladungsträgern — krūvininkų nuskurdinimas statusas T sritis radioelektronika atitikmenys: angl. charge carrier deficiency; charge carrier depletion vok. Ladungsträgerverarmung, f; Verarmung an Ladungsträgern, f rus. обеднение носителями заряда, n pranc. déplétion … Radioelektronikos terminų žodynas
krūvininkų nuskurdinimas — statusas T sritis radioelektronika atitikmenys: angl. charge carrier deficiency; charge carrier depletion vok. Ladungsträgerverarmung, f; Verarmung an Ladungsträgern, f rus. обеднение носителями заряда, n pranc. déplétion des porteurs de charge,… … Radioelektronikos terminų žodynas
обеднение носителями заряда — krūvininkų nuskurdinimas statusas T sritis radioelektronika atitikmenys: angl. charge carrier deficiency; charge carrier depletion vok. Ladungsträgerverarmung, f; Verarmung an Ladungsträgern, f rus. обеднение носителями заряда, n pranc. déplétion … Radioelektronikos terminų žodynas
Diode — Figure 1: Closeup of a diode, showing the square shaped semiconductor crystal (black object on left) … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… … Wikipedia
